ISSN : 1738-4125(Print)
ISSN : 2287-7509(Online)
ISSN : 2287-7509(Online)
클린룸 환경에서 가열되는 회전 반도체 웨이퍼로의 입자침착 수치해석
Numerical Analysis on Particle Deposition onto a Heated Rotating Semiconductor Wafer in Clean Room Environment
Abstract
Numerical analysis was conducted to characterize particle deposition on a heated rotating semiconductorwafer with respect to wafer diameter. The particle transport mechanisms considered in this study wereconvection, Brownian diffusion, gravitational settling, and thermophoresis. The averaged particle depositionvelocities and their radial distributions on the upper surface of the wafer were calculated from the particleconcentration equation in an Eulerian frame of reference at rotating speeds of 0 and 1000 rpm, waferdiameters of 100, 300 mm and wafer heating of =0 and 5K. It was observed from the numerical resultsthat the averaged deposition velocities on the upper surface increase, when the wafer diameter confirmsincrease. The comparison of the present numerical results with the available experimental results showedrelatively good agreement between different studies.
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